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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Reliability APPLICATIONS *Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1500 1500 5 3 5 35 V V .cn mi e V A ICP Collector Current-Pulse A PC Collector Power Dissipation @ TC90 W TJ Junction Temperature 130 Tstg Storage Temperature Range -65~130 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD649 MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A B 7.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V VCB= 750V ; IE= 0 ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 100 A hFE DC Current Gain IC= 3A; VCE= 10V tf Fall Time tstg Storage Time w w w. IC= 3A, IBend= 1A, LB= 20H .cn mi cse is 4 1 mA 12 1 s 13 s isc Websitewww.iscsemi.cn 2 |
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